Breakthrough in memory technologies could bring faster computing and lower power consumption
Washington: In order to achieve a substantial improvement in computation speed, scientists are racing to develop smaller and denser memory devices that operate with high speed and low power consumption.
Prof. Yossi Paltiel and research student Oren Ben-Dor at the Hebrew University of Jerusalem`s Harvey M. Krueger Family Center for Nanoscience and Nanotechnology, together with researchers from the Weizmann Institute of Science, have developed a simple magnetization progress that, by eliminating the need for permanent magnets in memory devices, opens the door to many technological applications.
The research deals with the flow properties of electron charge carriers in memory devices.
The new technique, called magnetless spin memory (MSM), drives a current through chiral material (a kind of abundantly available organic molecule) and selectively transfers electrons to magnetize nano magnetic layers or nano particles.
With this technique, the researchers showed that it is possible to create a magnetic-based memory device that does not require a permanent magnet, and which could allow for the miniaturization of memory bits down to a single nanoparticle.
Paltiel said that now that proof-of-concept devices have been designed and tested, magnetless spin memory has the potential to become the basis of a whole new generation of faster, smaller and less expensive memory technologies.
The study is published in journal Nature Communications.
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